Semiconductor Constructions

ABSTRACT

Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate. Some embodiments include utilization of an etch comprising HBr and O 2  to extend a pattern through a carbon-containing layer. The patterned carbon-containing layer may be used to pattern NAND cell unit gates. Some embodiments include structures having a patterned carbon-containing layer defining a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate.

TECHNICAL FIELD

NAND cells units, semiconductor constructions, and methods of formingNAND cell units.

BACKGROUND

Memory devices provide data storage for electronic systems.

One type of memory is a non-volatile memory known as flash memory. Aflash memory is a type of EEPROM (electrically-erasable programmableread-only memory) that may be erased and reprogrammed in blocks. Manymodern personal computers have BIOS stored on a flash memory chip. Sucha BIOS is sometimes called a flash BIOS. Flash memory is also popular inwireless electronic devices because it enables the manufacturer tosupport new communication protocols as they become standardized, and toprovide the ability to remotely upgrade the device for enhancedfeatures.

A typical flash memory comprises a memory array that includes a largenumber of memory cells arranged in row and column fashion. Each of thememory cells includes a floating gate field effect transistor capable ofholding a charge. The cells are usually grouped into blocks. Each of thecells within a block may be electrically programmed by charging thefloating gate. The charge may be removed from the floating gate by ablock erase operation. The data in a cell is determined by the presenceor absence of the charge in the floating gate.

NAND is a basic architecture of flash memory. A NAND cell unit comprisesa select gate coupled in series to a serial combination of memory cells(with the serial combination being commonly referred to as a NANDstring). One of the memory cells of the NAND string will be nearer theselect gate than all of the other memory cells of the NAND string, andsuch memory cell may be referred to as a first memory cell. There may beadvantages to forming the first memory cell of the NAND string to have adifferent dimension than other memory cells of the NAND string. ASamsung 4 GB SLC (single level cell) NAND flash utilizes a constructionin which the first memory cell is wider, in at least one cross-sectionalview, than other memory cells of the NAND string so that the firstmemory cell has a longer channel length than other memory cells of theNAND string.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified block diagram of a memory system in accordancewith an embodiment of the invention.

FIG. 2 is a schematic of a NAND memory array in accordance with anembodiment of the invention.

FIGS. 3-6 illustrate a semiconductor wafer fragment at variousprocessing stages of an embodiment of the invention.

FIG. 7 illustrates a semiconductor wafer fragment at a processing stageanalogous to that of FIG. 6, showing an alternative embodiment to thatof FIG. 6.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

FIG. 1 is a simplified block diagram of a memory system 100, accordingto an embodiment of the invention. Memory system 100 includes anintegrated circuit flash memory device 102 (e.g., a NAND memory device),that includes an array of floating-gate memory cells 104, an addressdecoder 106, row access circuitry 108, column access circuitry 110,control circuitry 112, input/output (I/O) circuitry 114, and an addressbuffer 116. Memory system 100 includes an external microprocessor 120,or memory controller, electrically connected to memory device 102 formemory accessing as part of an electronic system. The memory device 102receives control signals from the processor 120 over a control link 122.The memory cells are used to store data that are accessed via a data(DQ) link 124. Address signals are received via an address link 126, andare decoded at address decoder 106 to access the memory array 104.Address buffer circuit 116 latches the address signals. The memory cellsmay be accessed in response to the control signals and the addresssignals.

FIG. 2 is a schematic of a NAND memory array 200. Such may be a portionof memory array 104 of FIG. 1. Memory array 200 includes wordlines 202 ₁to 202 _(N), and intersecting local bitlines 204 ₁ to 204 _(M). Thenumber of wordlines 202 and the number of bitlines 204 may be each somepower of two, for example, 256 wordlines and 4,096 bitlines. The localbitlines 204 may be coupled to global bitlines (not shown) in amany-to-one relationship.

Memory array 200 includes NAND strings 206 ₁ to 206 _(M). Each NANDstring includes floating gate transistors 208 ₁ to 208 _(N). Thefloating gate transistors are located at intersections of wordlines 202and a local bitlines 204. The floating gate transistors 208 representnon-volatile memory cells for storage of data. The floating gatetransistors 208 of each NAND string 206 are connected in series sourceto drain between a source select gate 210 and a drain select gate 212.Each source select gate 210 is located at an intersection of a localbitline 204 and a source select line 214, while each drain select gate212 is located at an intersection of a local bitline 204 and a drainselect line 215.

A source of each source select gate 210 is connected to a common sourceline 216. The drain of each source select gate 210 is connected to thesource of the first floating-gate transistor 208 of the correspondingNAND string 206. For example, the drain of source select gate 210 ₁ isconnected to the source of floating-gate transistor 208 ₁ of thecorresponding NAND string 206 ₁. A control gate 220 of each sourceselect gate 210 is connected to source select line 214.

The drain of each drain select gate 212 is connected to a local bitline204 for the corresponding NAND string at a drain contact 228. Forexample, the drain of drain select gate 212 ₁ is connected to the localbitline 204 ₁ for the corresponding NAND string 206 ₁ at drain contact228 ₁. The source of each drain select gate 212 is connected to thedrain of the last floating-gate transistor 208 of the corresponding NANDstring 206. For example, the source of drain select gate 212 ₁ isconnected to the drain of floating gate transistor 208 _(N) of thecorresponding NAND string 206 ₁.

Floating gate transistors 208 include a source 230 and a drain 232, afloating gate 234, and a control gate 236. Floating gate transistors 208have their control gates 236 coupled to a wordline 202. A column of thefloating gate transistors 208 are those NAND strings 206 coupled to agiven local bitline 204. A row of the floating gate transistors 208 arethose transistors commonly coupled to a given wordline 202.

Some embodiments of the invention pertains to new methods which may beutilized for fabricating NAND cell units in which a NAND string gatenearest a select gate is different in dimension from other NAND stringgates. The select gate may be either a source select gate or a drainselect gate. In some embodiments, a plurality of NAND string gates arebetween a source select gate and a drain select gate, and the NANDstring gates closest to the source select gate and the drain select gateare of a different dimension than the remainder of the NAND stringgates.

An embodiment of the invention is described with reference to FIGS. 3-6.

Referring to FIG. 3, a semiconductor construction 300 is illustrated ata preliminary processing stage. Construction 300 comprises a basesemiconductor material 312. The base semiconductor material maycomprise, consist essentially of, or consist of silicon; and may, forexample, correspond to monocrystalline silicon lightly background dopedwith p-type dopant. Base semiconductor material 312 may be considered asemiconductor substrate or a portion of a semiconductor substrate. Theterms “semiconductive substrate”, “semiconductor construction” and“semiconductor substrate” mean any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove.

Base semiconductor material 312 may be homogeneous, as shown, or maycomprise various integrated circuit structures incorporated therein atthe processing stage of FIG. 3.

Gate dielectric material 314 is formed over base 312. The gatedielectric material may comprise any suitable composition or combinationof compositions, and may comprise, consist essentially of, or consist ofsilicon dioxide. The gate dielectric material may comprise a singlelayer, as shown, or may comprise multiple layers of electricallyinsulative material.

Electrically conductive floating gate material 316 is formed over gatedielectric material 314. Floating gate material 316 may comprise anysuitable composition or combination of compositions, and may comprise,consist essentially of, or consist of one or more metals (for instance,tungsten and titanium), metal-containing compositions (for instance,metal silicides and metal nitrides), and conductively-dopedsemiconductor materials (for instance, conductively-doped silicon).Floating gate material 316 may be a single electrically conductivelayer, as shown, or may comprise multiple electrically conductivelayers.

Inter-gate dielectric material 318 is formed over electricallyconductive floating gate material 316. Dielectric material 318 maycomprise any suitable composition or combination of compositions, andmay comprise, consist essentially of, or consist of one or both ofsilicon dioxide and silicon nitride. For instance, dielectric material318 may comprise a layer of silicon nitride between a pair of layers ofsilicon dioxide (a so-called ONO dielectric stack); or a high-kdielectric, such as Al₂O₃.

Electrically conductive control gate material 320 is formed overinter-gate dielectric material 318. Control gate material 320 maycomprise any suitable composition or combination of compositions, andmay comprise, consist essentially of, or consist of one or more metals(for instance, tungsten and titanium), metal-containing compositions(for instance, metal silicides and metal nitrides), andconductively-doped semiconductor materials (for instance,conductively-doped silicon). Control gate material 320 may be a singleelectrically conductive layer, as shown, or may comprise multipleelectrically conductive layers.

Electrically insulative capping material 322 is formed over control gatematerial 320. Capping material 322 may comprise any suitable compositionor combination of compositions, and may comprise, consist essentiallyof, or consist of one or more of silicon dioxide, silicon nitride andsilicon oxynitride. Capping material 322 may be a single electricallyinsulative layer, as shown, or may comprise multiple electricallyinsulative layers.

Materials 314, 316, 318, 320 and 322 may be together considered a flashgate stack 324, in that the materials may ultimately be patterned intoflash gates.

A first masking layer 326 is formed over the flash gate stack 324.Masking layer 326 may be a carbon-containing layer, and may comprise,consist essentially of, or consist of transparent carbon. Masking layer326 may be formed to a thickness of from about 500 Å to about 2500 Å.

A second masking layer 328 is over the first masking layer 326. Secondmasking layer 328 may be a silicon-containing layer, and may comprise,consist essentially of, or consist of one or both of polycrystallinesilicon and amorphous silicon.

A patterned third masking layer 330 is over second masking layer 328.Third masking layer 330 may be an oxide-containing layer, and may, forexample, comprise, consist essentially of, or consist of silicon oxide.Various antireflective materials (not shown) may be provided in additionto the illustrated masking layers.

Third masking layer 330 is patterned to have a plurality of openings 332extending therethrough. The openings define remaining regions of mask330 corresponding to a first select gate pattern 336, a second selectgate pattern 338, and a plurality of string gate patterns 340, 342, 344,346, 348 and 350 between the select gate patterns. Although only 6string gate patterns are shown, the fragment of FIG. 3 is illustrated tobe broken down the middle, and a bracket with the label “n” is utilizedto indicate that there may be a large number (“n”) of string gatepatterns formed between the selected patterns. In other embodiments,less than 6 string gate patterns may be formed between the select gatepatterns. The string gate patterns may be numerically ordered from leftto right so that the string gate pattern 340 (the string gate patternclosest to select gate pattern 336) is referred to as a first stringgate pattern, and the string gate pattern 350 (the string gate patternclosest to select gate pattern 338) is referred to as a last string gatepattern. The string gate patterns and select gate patterns may beconsidered to together define a NAND cell unit pattern.

The select gate patterns 336 and 338 are shown to be relatively wide,and the string gate patterns 340, 342, 344, 346, 348 and 350 are shownto be narrower than the select gate patterns. Further, the string gatepatterns are all shown to be about the same widths as one another. Thestring gate patterns may, for example, all have widths of about 54nanometers plus or minus about 4 nanometers (in other words, 54nanometers within a tolerance of about 4 nanometers).

Masking material 330 may be patterned by formingphotolithographically-patterned photoresist over a layer of material330, transferring a pattern from the photoresist to layer 330, andsubsequently removing the photoresist to leave the shown construction.

In some embodiments, construction 300 of FIG. 3 may be considered tocomprise a patterned masking material 330 over a stack which includesmaterials 314, 316, 318, 320, 322, 326 and 328. For instance,construction 300 of FIG. 3 may be considered to comprise a patternedmask 330 over a stack which includes carbon-containing layer 322 andelectrically conductive gate layer 316.

Referring to FIG. 4, openings 332 are extended through masking material328 with a suitable etch. If material 328 consists of one or both ofpolycrystalline silicon and amorphous silicon, the etch may utilize HBrand O₂, with or without Cl₂.

The extension of the openings into material 328 transfers the NAND cellunit pattern into material 328.

Referring to FIG. 5, openings 332 are extended through carbon-containingmaterial 326 with an etch utilizing sulfur dioxide (SO₂), oxygen (O₂)and hydrogen bromide (HBr).

The etching through carbon-containing material 326 forms the NAND cellunit pattern in the carbon-containing material. However, the conditionsutilized for the transfer of the string gate patterns intocarbon-containing material 326 cause the string gate patterns 340 and350 within the carbon-containing material to have different dimensionsthan the remaining string gate patterns 342, 344, 346 and 348. Stringgate patterns 340 and 350 are the string gate patterns closest to theselect gate patterns 336 and 338, and in the shown embodiment are widerthan the remaining string gate patterns. The difference in width ofstring gate patterns 340 and 350 relative to the remaining string gatepatterns is outside of a margin of tolerance of the etching process. Forinstance, if string gate patterns 342, 344, 346 and 348 have widthswithin about 4 nanometers of one another, the string gate patterns 340and 350 have widths that differ from the widths of the remaining stringpatterns by more than such 4 nanometer margin of tolerance.

The etching into carbon-containing material 326 may utilize an etchantcomprising sulfur dioxide, O₂ and hydrogen bromide in a ratio SO₂:O₂:HBrof about 90-140:50-90:50-160; and in some embodiments such ratio maybeabout 1.5:1:1.6. For instance, the etching may use the followingconditions:

-   -   a flow of HBr into a reaction chamber of from about 50 standard        cubic centimeters per minute (sccm) to about 160 sccm (for        instance, about 120 sccm);    -   a flow of sulfur dioxide into the reaction chamber of from about        90 sccm to about 140 sccm (for instance, about 110 sccm);

a flow of O₂ into the reaction chamber of from about 50 sccm to about 90sccm (for instance, about 75 sccm);

-   -   a pressure within the chamber of from about 5 millitorr to about        20 millitorr;    -   a plasma power of from about 400 watts to about 900 watts;    -   a bias on the substrate within the chamber of about 150-550        volts; and    -   a temperature within the chamber of about 33° C.

The etching conditions may be maintained for a time of from about 30seconds to about 1 minute.

An alternate etch to that described above may use the followingconditions:

-   -   a flow of HBr into a reaction chamber of from about 20 standard        cubic centimeters per minute (sccm) to about 120 sccm;    -   a flow of sulfur dioxide into the reaction chamber of from about        40 sccm to about 60 sccm;    -   a flow of O₂ into the reaction chamber of from about 20 sccm to        about 40 sccm;    -   a pressure within the chamber of from about 5 millitorr to about        20 millitorr; and    -   a bias on the substrate within the chamber of from about 150        watts to about 250 volts.

The etchant utilized for etching into carbon-containing material 326 mayconsist of sulfur dioxide, hydrogen bromide and oxygen in someembodiments. In other embodiments, the etchant may utilize othercompositions. For instance, in some embodiments the etchant may utilizeHBr, O₂, and N₂, without SO₂.

The aggressiveness of the etching into carbon-containing layer 326 withthe HBr, SO₂ and O₂ may be altered by changing the relative amount ofoxygen. For instance, increasing the relative amount of oxygen may makethe etch more aggressive, and decreasing the relative amount of oxygenmay make the etch less aggressive.

Although the string gate patterns closest to the select gate patternsare shown having larger widths than the remaining string gate patterns,the etch may be adjusted so that the string gate patterns closest to theselect gate patterns have smaller widths than the remaining string gatepatterns. More aggressive etches may decrease widths of the string gatepatterns closest to the select gate patterns faster than the widths ofother string gate patterns, while less aggressive etches may decreasewidths of string gate patterns closest to the select gate patternsslower than the widths of the other string gate patterns.

Referring to FIG. 6, openings 332 are extended through the gate stack324. Such patterns NAND select gates 366 and 368 from the select gatepatterns 336 and 338 (FIG. 5), and patterns NAND string gates 370, 372,374, 376, 378 and 380 from the string gate patterns 340, 342, 344, 346,348 and 350, respectively.

Masking materials 326, 328 and 330 (FIG. 5) are removed to form theconstruction of FIG. 6. The etching through gate stack 324 may comprisemultiple etches to etch through the various components of the gatestack, and some of such etches may remove some of the masking materials.For instance, capping layer 322 of the gate stack may comprise silicondioxide, and the etch through such capping layer may remove silicondioxide-containing masking layer 330. Similarly, one or both of gatelayers 316 and 320. may comprise silicon, and the etch through thesilicon-containing gate layer may remove silicon-containing maskingmaterial 328. Subsequently, the carbon-containing masking material 326may be removed with a so-called oxygen strip (in other words, an etchutilizing oxygen to oxidize the carbon-containing masking material). Insome embodiments, materials 328 and 330 may be removed from overmaterial 326 prior to etching into the gate stack. For instance, if anaggressive etch is utilized to reduce a width of the regions of material326 corresponding to the first and last NAND string gate patterns morethan widths of patterned materials overlying such first and last NANDstring gate patterns, materials 328 and 330 may be removed from overmaterial 326 prior to etching into the gate stack.

The first and last NAND string gates 370 and 380 have dimensions whichdiffer from the dimensions of the other NAND string gates 372, 374, 376and 378 by at least the amount by which the dimensions of the NANDstring patterns 340 and 350 in the carbon-containing layer (FIG. 5)differed from the dimensions of the remaining NAND string patterns 342,344, 346 and 348. For instance, the NAND string gates 372, 374, 376 and378 may have widths of about 54 nanometers plus or minus 4 nanometers,and the first and last NAND string gates may have widths which differfrom the widths of the remaining NAND string gates by more than 4nanometers.

Although the first and last NAND string gates 370 and 380 have about thesame width as one another in the shown embodiment, in other embodimentsthe first and last NAND string gates may have widths which differ fromone another by more than a margin of tolerance of the etch utilized toetch the carbon-containing layer 326 (FIG. 5). Such other embodimentsmay include, for example, embodiments in which the select gates 366 and368 are formed to have different widths from one another.

The select gates 366 and 368 may be a source select gate and a drainselect gate, respectively, and may have widths of about 260 nanometers.

The NAND construction of FIG. 6 has two select gates 366 and 368, andhas two string gates 370 and 380 modified in dimension relative to theremaining string gates. A NAND cell unit may, however, be understood tocomprise at least one select gate, and some embodiments of the inventionmay be understood to form at least one string gate modified in dimensionrelative to other string gates.

FIG. 6 shows an embodiment in which the NAND string gates closest to theselect gates are larger in width than the remaining NAND string gates,and accordingly have longer channel lengths than the remaining NANDstring gates. However, as discussed above with reference to the etchthrough the carbon-containing layer 326, the aggressiveness of such etchmay be chosen so that the NAND string gates closest to the select gatesare smaller in width than the remaining NAND string gates (andaccordingly have shorter channel lengths than the remaining NAND stringgates). FIG. 7 illustrates an embodiment in which the NAND string gatesclosest to the select gates have widths smaller than the remaining NANDstring gates. The numbering utilized in FIG. 7 is identical to thatutilized in FIG. 6. An amount by which the NAND string gates closest tothe select gates are narrower than the other NAND string gates may bemore than a margin of tolerance of the widths of the NAND string gates,and may, for example, be more than 4 nanometers in some embodiments.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1-35. (canceled) 36: A semiconductor construction, comprising: a NANDgate stack over a semiconductor substrate; and a patternedcarbon-containing layer over the NAND gate stack; the patternedcarbon-containing layer having openings extending therethrough defininga NAND cell unit which includes a pair of select gates and plurality ofstring gates between the select gates, the select gates being a firstselect gate and a second select gate; one of the string gates beingnearer the first select gate than the rest of the string gates, andbeing a first string gate; one of the string gates being nearer thesecond select gate than the rest of the string gates, and being a secondstring gate; the first and second string gates having different widthsthan all others of the string gates by at least about 4 nanometers, inat least one cross-sectional view. 37: The construction of claim 36wherein the NAND gate stack comprises a layer of gate dielectric, anelectrically conductive layer over the layer of gate dielectric, and anelectrically insulative capping layer over the electrically conductivelayer. 38: The construction of claim 36 wherein the NAND gate stackfurther comprises a layer of gate dielectric, an electrically conductivelayer over the layer of gate dielectric, inter-gate dielectric over theelectrically conductive layer, a control gate layer over the inter-gatedielectric, and an electrically insulative capping layer over thecontrol gate layer. 39: The construction of claim 36 wherein thecarbon-containing layer consists of transparent carbon. 40: Theconstruction of claim 36 wherein the first and second string gates arenarrower than all others of the string gates. 41: The construction ofclaim 36 wherein the first and second string gates are wider than allothers of the string gates. 42: A semiconductor construction comprisinga NAND cell unit which includes a pair of select gates and plurality ofstring gates between the select gates, the select gates being a firstselect gate and a second select gate; one of the string gates beingnearer the first select gate than the rest of the string gates, andbeing a first string gate; one of the string gates being nearer thesecond select gate than the rest of the string gates, and being a secondstring gate; the first and second string gates having different widthsthan all others of the string gates by at least about 4 nanometers, inat least one cross-sectional view. 43: A semiconductor construction,comprising: a NAND gate stack over a semiconductor substrate; and apatterned carbon-containing layer over the NAND gate stack; thepatterned carbon-containing layer having openings extending therethroughdefining a NAND cell unit which includes a pair of select gates andplurality of string gates between the select gates, the select gatesbeing a first select gate and a second select gate; one of the stringgates being nearer the first select gate than the rest of the stringgates, and being a first string gate; one of the string gates beingnearer the second select gate than the rest of the string gates, andbeing a second string gate; the first and second string gates havingdifferent widths than all others of the string gates by at least about 4nanometers, in at least one cross-sectional view, and having about thesame width as one another. 44: A semiconductor construction, comprisinga NAND cell unit which includes a pair of select gates and plurality ofstring gates between the select gates, the select gates being a firstselect gate and a second select gate; one of the string gates beingnearer the first select gate than the rest of the string gates, andbeing a first string gate; one of the string gates being nearer thesecond select gate than the rest of the string gates, and being a secondstring gate; the first and second string gates having a different widththan all others of the string gates by at least about 4 nanometers, inat least one cross-sectional view, and having a same width as oneanother.